| PART |
Description |
Maker |
| APT13003L-15 |
450V NPN HIGH VOLTAGE POWER TRANSISTOR
|
Diodes Incorporated
|
| IRFP354 |
450V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=450V, Rds(on)=0.35ohm, Id=14A) 功率MOSFET（减振钢板基本\u003d 450V，的Rdson）\u003d 0.35ohm，身份证\u003d 14A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| 2SC3981 2SC3981A |
TRANS NPN 40V 350MW SMD SOT23 5 A, 800 V, NPN, Si, POWER TRANSISTOR
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| BUW12A BUW12 |
POWER TRANSISTORS(8A,400-450V,125W)
POWER TRANSISTORS(8A/400-450V/125W)
POWER TRANSISTORS(8A,400-450V,125W) 功率晶体管（8A400 - 450V，功率为125
|
MOSPEC[Mospec Semiconductor]
Mospec Semiconductor, Corp.
|
| STD2NC45-1 STQ1NC45R-AP STQ1NC45-AP STD2NC45 STD2N |
N-CHANNEL MOSFET
N-CHANNEL 450V - 4.1ohm - 1.5 A IPAK / TO-92 SuperMESH⑩Power MOSFET
N-channel 450V - 4.1 - 1.5A - IPAK - TO-92 SuperMESH Power MOSFET
N-CHANNEL 450V - 4.1ohm - 1.5 A IPAK / TO-92 SuperMESHPower MOSFET
N-channel 450V - 4.1з - 1.5A - IPAK - TO-92 SuperMESH⑩ Power MOSFET
N-CHANNEL 450V 4.1OHM 1.5A DPAK/IPAK/TO-92 SUPERMESH POWER MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| BUL54AFI BUL52BFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 4 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| BUL72A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| RJK4515DPK-00T0 RJK4515DPK-12 |
450V - 27A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| BUX48A BUV48A BUV48AFI BUX48 |
HIGH POWER NPN SILICON TRANSISTORS
RP Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 24V; Power: 1W; Pot-Core Transformer - separated
HIGH POWER NPN SILICON TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc.
STMicroelectronics
|
